Washington, Apr 17 : Paving the way for low-power, high-efficiency electronic memory, scientists have deposited a well-known oxide on silicon to create a ferroelectric state, which could be the key to next-generation memory devices.
For the study, Cornell materials scientist Darrell Schlom took strontium titanate, and deposited it on silicon in such a way that the silicon squeezes it into a special state called ferroelectric.
One can see ferroelectric materials in "smart cards" that are used in many subways and ski resorts, and are made with materials like lead zirconium titanate or strontium bismuth tantalate, which can instantly switch between different memory states using very little electric power.